KT885B Datasheet and Replacement

   Type Designator: KT885B
   SMD Transistor Code: КТ885Б
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 500 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 40 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
     - BJT ⓘ Cross-Reference Search