KT885B Specs and Replacement

Type Designator: KT885B

SMD Transistor Code: КТ885Б

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 500 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 40 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Collector Capacitance (Cc): 100 pF

Forward Current Transfer Ratio (hFE), MIN: 12

Noise Figure, dB: -

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KT885B datasheet

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Detailed specifications: KT880B, KT880G, KT880V, KT881A, KT881B, KT881G, KT881V, KT885A, 2SC828, KT887A, KT887B, KT888A, KT888B, KT890A, KT890B, KT890V, KT892A

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