KT888B Specs and Replacement

Type Designator: KT888B

SMD Transistor Code: КТ888Б

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 7 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

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KT888B datasheet

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Detailed specifications: KT881B, KT881G, KT881V, KT885A, KT885B, KT887A, KT887B, KT888A, MJE350, KT890A, KT890B, KT890V, KT892A, KT892B, KT893A, KT894A9, KT895A-9

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