KT9124B Specs and Replacement

Type Designator: KT9124B

SMD Transistor Code: КТ9124Б

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Emitter-Base Voltage |Veb|: 1.5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 3500 MHz

Forward Current Transfer Ratio (hFE), MIN: 6

Noise Figure, dB: -

 KT9124B Substitution

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KT9124B datasheet

 9.1. Size:706K  russia

 kt912a-b 2t912a-b.pdf pdf_icon

KT9124B

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 9.2. Size:96K  syntez microelectronics

 kt9128ac.pdf pdf_icon

KT9124B

Syntez Microelectronics KT9128AC SILICON BIPOLAR NPN POWER TRANSISTOR 200 W, in the 30 175 MHz Frequency Range ________________________________________________ The silicon bipolar n-p-n transistor is designed for wideband large signal output and driver amplifier stages in the 30 to 175 MHz frequency range. Features (At 175 MHz) Output Power 200 W Power Gain 7.5 dB Min ... See More ⇒

Detailed specifications: KT911A, KT911B, KT911G, KT9121A, KT9121B, KT9121G, KT9121V, KT9124A, S8550, KT9126A, KT9127A, KT9127B, KT9129A, KT912A, KT912B, KT9131A, KT9133A

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