KT9126A Specs and Replacement
Type Designator: KT9126A
SMD Transistor Code: КТ9126А
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 330 W
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1.5 MHz
Collector Capacitance (Cc): 5.7 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
KT9126A Substitution
- BJT ⓘ Cross-Reference Search
KT9126A datasheet
Syntez Microelectronics KT9128AC SILICON BIPOLAR NPN POWER TRANSISTOR 200 W, in the 30 175 MHz Frequency Range ________________________________________________ The silicon bipolar n-p-n transistor is designed for wideband large signal output and driver amplifier stages in the 30 to 175 MHz frequency range. Features (At 175 MHz) Output Power 200 W Power Gain 7.5 dB Min ... See More ⇒
Detailed specifications: KT911B, KT911G, KT9121A, KT9121B, KT9121G, KT9121V, KT9124A, KT9124B, 2SC4793, KT9127A, KT9127B, KT9129A, KT912A, KT912B, KT9131A, KT9133A, KT9135A-2
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