KT9149B Specs and Replacement

Type Designator: KT9149B

SMD Transistor Code: КТ9149Б

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 28 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 2.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 2300 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

 KT9149B Substitution

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KT9149B datasheet

 9.1. Size:643K  russia

 kt914a 2t914a.pdf pdf_icon

KT9149B

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 9.2. Size:82K  syntez microelectronics

 kt9147a.pdf pdf_icon

KT9149B

Syntez Microelectronics KT9147AC SILICON BIPOLAR NPN POWER TRANSISTOR 200 W, in the 30 500 MHz Frequency Range 23,5 The silicon bipolar n-p-n transistor is designed for wideband large signal output and driver amplifier 11,4 max 11,4 max stages in the 30 to 500 MHz frequency range. Features (At 400 MHz) Output Power 160 W Power Gain 6 dB Min 38 max Efficiency 50% ... See More ⇒

Detailed specifications: KT913B, KT913V, KT9140A, KT9141A, KT9141A1, KT9144A9, KT9145A9, KT9149A, C3198, KT914A, KT916A, KT916B, KT918A, KT918B, KT919A, KT919B, KT919G

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