KTA1070 Datasheet and Replacement

SEMICONDUCTOR KTA1070TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH-DEFINITION CRT DISPLAYVIDEO OUTPUT APPLICATION.B DFEATURES High Voltage : VCEO=-200V. DIM MILLIMETERSP High Transition Frequency : fT=150MHz(Typ.).DEPTH:0.2A 7.20 MAX Low Collector Output Capacitance : Cob=2.6pF(Typ.). B 5.20 MAXCC 0.60 MAXS Complementary to KTC3467.D 2.50 MAXQE 1.15 M

DIP Type TransistorsPNP TransistorsKTA1070TO-92LUnit:mm4.9 0.20.7 0.1 Features Low collector output capacitance0.45 0.1 High voltage and High fT Complementary to KTC346721 31.27 2.54 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V

SEMICONDUCTOR KTA1073TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE CONTROL APPLICATIONS.PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS.CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS.EBKDIM MILLIMETERSFEATURES_A 2.9 + 0.2B 1.6+0.2/-0.1High Voltage : VCBO=-300V, VCEO=-300V_C 0.70 + 0.0523Low Saturation Voltage : VCE(sat)=-0.5V(Max.) _D 0.4 + 0

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO-92L KTA1023 TRANSISTOR (PNP) 1. EMITTER FEATURES Complementary to KTC1027 2. COLLECTER 3. BASE MAXIMUM RATINGS (TaB=25 unless otherwise noted) Symbol Parameter Value UnitVB B Collector-Base Voltage -120 V CBOVB B Collector-Emitter Voltage -120 V CEOVB B Emitte

SEMICONDUCTOR KTA1049TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURES DIM MILLIMETERSSLow Collector-Emitter Saturation Voltage_A 10.0 + 0.3_+B 15.0 0.3E: VCE(sat)=-2.0V(Max.).C _2.70 0.3+D 0.76+0.09/-0.05Complementary to KTC2028._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L

SEMICONDUCTOR KTA1042D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.FEATURES AI C JLow Collector-Emitter Saturation VoltageDIM MILLIMETERS_: VCE(sat)=-2.0V(Max.). A 6.60 + 0.2_B 6.10 + 0.2_C 5.0 + 0.2Complementary to KTC2022D/L._D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAX_I 2.30 + 0.2_J 0.5 + 0.1_H K 2.00

SEMICONDUCTOR KTA1046TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORINDUSTRIAL USE. GENERAL PURPOSE APPLICATION.ACDIM MILLIMETERSSFEATURES_A 10.0 0.3+_+B 15.0 0.3Low Collector Saturation Voltage EC _2.70 0.3+D: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. 0.76+0.09/-0.05_E 3.2 0.2+Complementary to KTC2026._F 3.0 0.3+_12.0 0.3G +H 0.5+0

SEMICONDUCTOR KTA1024TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.B DFEATURESHigh Voltage : VCEO=-150V.Low Output Capacitance : Cob=5.0pF(Max.).DIM MILLIMETERSPHigh Transition Frequency : fT=120MHz (Typ.).DEPTH:0.2A 7.20 MAXComplementary to KTC3206. B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G 1.70 MAXH 0.55 MAXFF_

SEMICONDUCTOR KTA1050TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.CAFEATURES Low Collector-Emitter Saturation Voltage: VCE(sat)=-2.0V(Max.).E DIM MILLIMETERS_A 10.16 0.2+_B 15.87 0.2+_C 2.54 0.2+_D 0.8 0.1+_E 3.18 + 0.1_F 3.3 0.1+_G 12.57 0.2+LM_H 0.5 0.1R +_13.0 0.5J +_K 3.23 0.1+DL

SEMICONDUCTOR KTA1040D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.DPAK FOR SURFACE MOUNT APPLICATIONS. AI C JFEATURESDIM MILLIMETERS_A 6.60 + 0.2Low Collector Saturation Voltage_B 6.10 + 0.2_C 5.0 + 0.2: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. _D 1.10 + 0.2_E 2.70 + 0.2_Straight Lead (IPAK, "L" Suffix) F 2.30 + 0.

SEMICONDUCTOR KTA1023TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.B DFEATURE Complementary to KTC1027. DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHARACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBO -120 VCollector-Base Voltage H 0.55 MAXFF_J 14.00 + 0.50K

SEMICONDUCTOR KTA1045D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW FREQUENCY POWER AMP,MEDIUM SPEED SWITCHING APPLICATIONS A I C JFEATURES DIM MILLIMETERS_A 6.60 + 0.2_B 6.10 + 0.2High breakdown voltage VCEO 120V, high current 1A._C 5.0 + 0.2_D 1.10 + 0.2Low saturation voltage and good linearity of hFE. _E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAXC

SEMICONDUCTOR KTA1001TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORCAMERA STROBO FLASH APPLICATION.HIGH CURRENT APPLICATION.ACFEATURES HhFE=100 320 (VCE=-2V, IC=-0.5A).GhFE=70(Min.) (VCE=-2V, IC=-3A). Low Collector Saturation Voltage.DIM MILLIMETERS: VCE(sat)=-0.5V(Max.) (IC=-3A, IB=-75mA).A 4.70 MAXD _+D B 2.50 0.20High Power Dissipation.K C 1.70 MAXD 0.

SEMICONDUCTOR KTA1042D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.FEATURES AI C JLow Collector-Emitter Saturation VoltageDIM MILLIMETERS_: VCE(sat)=-2.0V(Max.). A 6.60 + 0.2_B 6.10 + 0.2_C 5.0 + 0.2Complementary to KTC2022D/L._D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAX_I 2.30 + 0.2_J 0.5 + 0.1_H K 2.00

SEMICONDUCTOR KTA1021TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BFEATURES Excellent hFE Linearity.: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA DIM MILLIMETERSOA 3.20 MAX 1 Watt Amplifier Application. HM B 4.30 MAXC 0.55 MAX Complementary to KTC1020._D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H 0.60 MAXJ 1

SEMICONDUCTOR KTA1040D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.DPAK FOR SURFACE MOUNT APPLICATIONS. AI C JFEATURESDIM MILLIMETERS_A 6.60 + 0.2Low Collector Saturation Voltage_B 6.10 + 0.2_C 5.0 + 0.2: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. _D 1.10 + 0.2_E 2.70 + 0.2_Straight Lead (IPAK, "L" Suffix) F 2.30

KTA1024 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features High Voltage : VCEO=-150V. 7.8008.200 Low Output Capacitance : Cob=5.0pF(Max.). High Transition frequency : fT=120MHz (Typ.). 0.6000.800Complementary to KTC3206. 0.350MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.55013.80014.200Symbol Paramete

KTA1023 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTER 3. BASE 2 3 4.7001 5.100Features Complementary to KTC1027 7.8008.200MAXIMUM RATINGS (TB B=25 unless otherwise noted) A0.6000.800Symbol Parameter Value UnitsVB B Collector-Base Voltage -120 V CBO0.3500.550VB B Collector-Emitter Voltage -120 V CEO13.80014.200VB B Emitter-Base Vo

KTA1023WEITRONPNP TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASETO-92LMAXIMUM RATINGS (TA=25 unless otherwise noted)valueParameter Symbol UnitsCollector-Base Voltage VCBO -120 V-120 VCollector-Emitter Voltage VCEO-5 VEmitter-Base Voltage VEBO-0.8 ACollector Current -Continuous ICCollector Power Dissipation PC 0.9 WJunction Temperature TJ 150

KTA1023 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features KTC1027 Complementary pair with KTC1027. / Applications ,High voltage application. / Equivalent Circuit / Pinning 1 2 3 PIN1

DIP Type TransistorsPNP TransistorsKTA1038TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features High Breakdown Voltage Low Collector Saturation Voltage Comlementary to KTC20181.27 0.10 1.52 0.1021 30.80 0.10 +0.100.50 0.05 2.40 0.202.54TYP 2.54TYP[2.54 0.20 ] [2.54 0.20 ]1. Base2. Collector3.

DIP Type TransistorsPNP TransistorsKTA1049Unit: mmTO-220F0.200.200.202.540.200.70 Features Low collector saturation voltage Complementary to KTC20280.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V

DIP Type TransistorsPNP TransistorsKTA1036TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features Low Collector Saturation Voltage Comlementary to KTC20161.27 0.10 1.52 0.1021 30.80 0.10 +0.100.50 0.05 2.40 0.202.54TYP 2.54TYP[2.54 0.20 ] [2.54 0.20 ]1. Base2. Collector10.00 0.20 3. Emitter Ab

DIP Type TransistorsPNP TransistorsKTA1046Unit: mmTO-220F0.200.200.202.540.200.70 Features Low saturation voltage and good linearity of hFE. Complementary to KTC2026 0.202.761.47max0.200.500.200.801. Base2.54typ2.54typ 2. Collector3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -

DIP Type TransistorsPNP TransistorsKTA1024TO-92LUnit:mm4.9 0.2 Features0.7 0.1 High Voltage and High fT Low Output Capacitance0.45 0.1 Comlementary to KTC320621 31.27 2.54 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -150

SMD Type TransistorsPNP TransistorsKTA10011.70 0.1 Features Low Collector Saturation Voltage High Power Dissipation0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -8 Collector Current - Con

DIP Type TransistorsPNP TransistorsKTA1021TO-92M Unit:mm6.0 0.2 Features Excellent hFE Linearity1.0 0.1 1 Watt Amplifier Application0.50 0.1 Complementary to KTC102021 31.50 3.0 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35

isc Silicon PNP Power Transistors KTA1046DESCRIPTIONLow Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type KTC2026Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose applications .ABSOLUTE

isc Silicon PNP Power Transistor KTA1042DDESCRIPTIONLow Collector-Emitter saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage -100