KTC3295 Datasheet, Equivalent, Cross Reference Search

SEMICONDUCTOR KTC3295TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AMPLIFIER APPLICATION. FEATUREEL B LHigh hFE : hFE=6003600.DIM MILLIMETERSNoise Figure : 0.5dB(Typ.) at f=100Hz._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25)J 0.13+0.10/-0.05K 0.00 ~ 0.10CHARACTER

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthKTC3205Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Power Dissipation: 1W (Tamb=25 ) Collector Current: 2APlastic-Encapsulate Collector-base Voltage: 30V Epoxy meets UL 94 V-0 flammability ratingTransistor Moisture Sensitivity Level 1 Ma

KTC3265 0.8A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE A High DC current gain L Complementary to KTA1298 33Top View C B11 22K ECLASSIFICATION OF hFE DProduct-Rank KTC3265-O KTC3265-Y H JF GRange 100~200 160~320 Marking Code EO EY

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3202 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER General Purpose Application Switching Application 2. COLLECTOR 3. BASE Equivalent Circuit

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3265 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO E

SEMICONDUCTOR KTC3227TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. B DFEATURES Complementary to KTA1274.DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHARACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBOCollector-Base Voltage 80 V H 0.55 MAXFF_J 14.00 + 0.50

SEMICONDUCTOR KTC3204TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATURES BComplementary to KTA1272.DIM MILLIMETERSOA 3.20 MAXHM B 4.30 MAXC 0.55 MAXMAXIMUM RATING (Ta=25)_D 2.40 + 0.15E 1.27CHARACTERISTIC SYMBOL RATING UNITF 2.30C_+G 14.00 0.50VCBO Collector-Base Voltage 35 VH 0.60 MAXJ 1.05E EVCEOCollecto

SEMICONDUCTOR KTC3203TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. B CFEATURES Complementary to KTA1271.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO Collector-Base Voltage 35 VG 0.85H 0.45VCEOCollector-Emitter Voltage 30 V_HJ 14.

SEMICONDUCTOR KTC3266TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORPOWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION.B CFEATURES Low Saturation Voltage. : VCE(sat)=0.5V(Max.) at IC=2AN DIM MILLIMETERS Complementary to KTA1296. A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50CHARACTE

SEMICONDUCTOR KTC3200TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AUDIO AMPLIFIER APPLICATION.B CFEATURESThe KTC3200 is a transistor for low frequency and low noise applications.This device is designed to ower noise figure in the region of low signalsource impedance, and to lower the pulse noise. N DIM MILLIMETERSThis is recommended for the first stages of equalizer

SEMICONDUCTOR KTC3226TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSTROBO FLASH APPLICATION.HIGH CURRENT APLICATION.B DFEATURES High DC Current Gain and Excellent hFE LinearityDIM MILLIMETERSP: hFE(1)=140 600 (VCE=1V, IC=0.5A)DEPTH:0.2A 7.20 MAX: hFE(2)=70(Min.), 200(Typ.) (VCE=1V, IC=2A). B 5.20 MAXCC 0.60 MAXS Low Saturation Voltage D 2.50 MAXQE 1.15 MAX

SEMICONDUCTOR KTC3228TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORCOLOR TV VERT. DEFELECTION OUTPUT APPLICATION.COLOR TV CLASS B SOUND OUTPUT APPLICATION.FEATURES High Voltage : VCEO=160V.Large Continuous Collector Current Capability.Recommended for Vert. Deflection Output & Sound OutputApplications for Line Operated TV.Complementary to KTA1275._+_+MAXIMUM R

SEMICONDUCTOR KTC3203ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATURES B CComplementary to KTA1271AN DIM MILLIMETERSA 4.70 MAXMAXIMUM RATING (Ta=25) EKB 4.80 MAXGC 3.70 MAXCHARACTERISTIC SYMBOL RATING UNIT DD 0.45E 1.00VCBO Collector-Base Voltage 35 VF 1.27G 0.85VCEOCollector-Emitter Voltage 30 VH 0.45_HJ 14.

SEMICONDUCTOR KTC3210TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. B CFEATURES Complementary to KTA1282.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25 ) GC 3.70 MAXDCHARACTERISTIC SYMBOL RATING UNIT D 0.45E 1.00F 1.27VCBOCollector-Base Voltage 30 VG 0.85H 0.45VCEOCollector-Emitter Voltage 30 V_HJ 14.00 + 0

SEMICONDUCTOR KTC3207TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE SWITCHING APPLICATION.COLOR TV HORIZONTAL DIRVER APPLICATION.B DCOLOR TV CHROMA OUTPUT APPLICATION.FEATURESDIM MILLIMETERSPHigh Voltage : V(BR)CEO=300V.DEPTH:0.2A 7.20 MAXSmall Collector Output Capacitance : Cob=3.0pF(Typ.). B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G

SEMICONDUCTOR KTC3207TTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE SWITCHING APPLICATION.COLOR TV HORIZONTAL DRIVER APPLICATION.COLOR TV CHROMA OUTPUT APPLICATION.EBKDIM MILLIMETERSFEATURES_A 2.9 + 0.2B 1.6+0.2/-0.1High Voltage : V(BR)CEO=300V_C 0.70 + 0.0523Small Collector Output Capacitance : Cob=3.0pF(Typ.) _D 0.4 + 0.1E 2.8+0.2/-0.3Comp

SEMICONDUCTOR KTC3202TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. B CFEATURESExcellent hFE Linearity: hFE(2)=25(Min.) at VCE=6V, IC=400mA.N DIM MILLIMETERSComplementary to KTA1270.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50CHARACTERI

SEMICONDUCTOR KTC3209TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORPOWER AMPLIFIER APPLICATIONS.POWER SWITCHING APPLICATIONS. FEATURESLow Collector Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A)High Speed Switching Time : tstg=1.0 S(Typ.)Complementary to KTA1281.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 50 VVCEOCollector-Emi

SEMICONDUCTOR KTC3205TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION.B DFEATURES Complementary to KTA1273.DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHARACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBOCollector-Base Voltage 30 V H 0.55 MAXFF_J 14.00 + 0.50VCE

SEMICONDUCTOR KTC3265TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. EL B LFEATURES DIM MILLIMETERS High DC Current Gain : hFE=100 320. _+2.93 0.20AB 1.30+0.20/-0.15 Low Saturation VoltageC 1.30 MAX2: VCE(sat)=0.4V(Max.) (IC=500mA, IB=20mA). 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20 Suitable f

SEMICONDUCTOR KTC3211TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. B CFEATURE Complementary to KTA1283.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25 ) GC 3.70 MAXDCHARACTERISTIC SYMBOL RATING UNIT D 0.45E 1.00F 1.27VCBOCollector-Base Voltage 40 VG 0.85H 0.45VCEOCollector-Emitter Voltage 25 V_HJ 14.00 + 0.

SEMICONDUCTOR KTC3206TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORBLACK AND WHITE TV VIDEO OUTPUT APLICATION. HIGH VOLTAGE SWITCHING APPLICATION.B DFEATURESHigh Breakdown Voltage : VCEO=150V(Min.).DIM MILLIMETERSPLow Output Capacitance : Cob=5.0pF(Max.).DEPTH:0.2A 7.20 MAXHigh Transition Frequency : fT=120MHz(Typ.). B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MA

SEMICONDUCTOR KTC3229TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORCOLOR TV CHROMA OUTPUT APPLICATION.ACFEAUTRESDIM MILLIMETERSSHigh Voltage : VCEO=300V._A 10.0 + 0.3_+B 15.0 0.3ESmall Collector Output Capacitance : Cob=4.0pF(Max.).C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMA

SEMICONDUCTOR KTC3245TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.B CFEATURES High Breakdown Voltage. Collector Power Dissipation : PC=625mW.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBOCollector-Base Voltage 400 V H 0.45_HJ 14.00

KTC3205 TRANSISTOR (NPN) TO-92L 1. EMITTER FEATURES 2. COLLECTOR Complementary to KTA1273 3. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 1 W TJ Juncti

KTC3265 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER High DC current gain 3. COLLECTOR Complementary to KTA1298 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipat

KTC3203(NPN)TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Complementary to KTA1271 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC 625 mWCollector Power Dissipation Dimen

KTC3205 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.1001Features7.800 8.200 Complementary to KTA1273 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.3500.55013.800VCBO Collector-Base Voltage 30 V14.200VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collec

KTC3202(NPN)TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features General purpose application switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 500 mAPC 625 mWCollector Po

KTC3265 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain: hFE=100-320 Complementary to KTA1298 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 V IC Collec

KTC3206 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.800 High Breakdown Voltage : VCEO=150V(Min.) 8.200 Low Output Capacitance : Cob=5.0pF(Max.) 0.600High Transition Frequency : fT=120MHz(Typ.). 0.8000.3500.550MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.80014.200Symbol Value Units Parameter

KTC3265NPN General Purpose Transistors3P b Lead(Pb)-Free12SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter Voltage30VCEOVVCBOCollector-Base Voltage 35 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 800 mATotal Device DissipationPD200 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature -55 t

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3265 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emit

KTC3200 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features h ,FELow noise, high hFE, high breakdown voltage. / Applications Low noise audio amplifier application. / Equivalent Ci

KTC3228 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features KTA1275 High voltage, complementary to KTA1275. / Applications ,Color TV vertical deflection output, color TV class B s

KTC3205T(BR3DG3205T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features KTA1273T(BR3CG1273T)Complementary pair with KTA1273T(BR3CG1273T). / Applications High current application. / Equivalent Circuit

DIP Type TransistorsNPN TransistorsKTC3202Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Complementary to KTA12700.60 Max0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter -

DIP Type TransistorsNPN TransistorsKTC3209TO-92LUnit:mm4.9 0.20.7 0.1 Features Low Saturation Voltage0.45 0.1 High Speed Switching Time Complementary to KTA128121 31.27 2.54 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50

SMD Type TransistorsNPN TransistorsKTC3265SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High DC Current Gain Low Saturation Voltage1 2 Small Package+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.1 Complementary to KTA12981.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Vol

DIP Type TransistorsNPN TransistorsKTC3206TO-92LUnit:mm4.9 0.2 Features0.7 0.1 High Breakdown Voltage High Transition Frequency0.45 0.1 Complementary to KTA102421 31.27 2.54 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200

KTC3209(3DA3209) NPN /SILICON NPN TRANSISTOR :,/Purpose: Power amplifier and switching applications. :,, KTA1281(3CA1281) Features: Low saturation voltage, high speed switching time, complementary to KTA1281(3CA1281). /Absolute maximum ratings(Ta=25)

Plastic-Encapsulate TransistorsFEATURESHigh DC current gainKTC3265(NPN)Complementary to KTA1298MAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage 35 VVCEOCollector-Emitter Voltage 30 VVEBOEmitter-Base Voltage 5 VIC 1. BASECollector Current -Continuous 800 mACollector Power Dissipation PC 200 mW 2. EMITTER SOT-233.

isc Silicon NPN Power Transistor KTC3229DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN