KTC4370A Datasheet, Equivalent, Cross Reference Search
Type Designator: KTC4370A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO220F
KTC4370A Transistor Equivalent Substitute - Cross-Reference Search
KTC4370A Datasheet (PDF)
ktc4370a.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate TransistorsTO 220F KTC4370A TRANSISTOR (NPN)1. BASEFEATURES 2. COLLECTOR High Transition Frequency Complementary to KTA1659A3. EMITTER High Voltage Application Equivalent Circuit KTC4370A=Device code Solid dot=Green moldinn compound device, if none,the normal deviceXXXX=Code
ktc4370 ktc4370a.pdf
SEMICONDUCTOR KTC4370/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.ACFEATURESDIM MILLIMETERSSHigh Transition Frequency : fT=100MHz(Typ.)._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTA1659/A.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (T
ktc4370a.pdf
DIP Type TransistorsNPN TransistorsKTC4370AUnit: mmTO-220F0.200.200.202.540.200.70 Features High Transition Frequency Complementary to KTA1659A0.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 1
ktc4370a.pdf
isc Silicon NPN Power Transistor KTC4370ADESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = 180V(Min)CEOComplement to Type KTA1659AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 180 VCBO
ktc4370 a.pdf
SEMICONDUCTOR KTC4370/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.ACFEATURESDIM MILLIMETERSSHigh Transition Frequency : fT=100MHz(Typ.)._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTA1659/A.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (T
ktc4370.pdf
DIP Type TransistorsNPN TransistorsKTC4370Unit: mmTO-220F0.200.200.202.540.200.70 Features High Transition Frequency Complementary to KTA16590.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160
ktc4370.pdf
isc Silicon NPN Power Transistor KTC4370DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = 160V(Min)CEOComplement to Type KTA1659Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 160 VCBO
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: KTD1937
