KTC8050 Specs and Replacement
Type Designator: KTC8050
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
KTC8050 Substitution
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KTC8050 datasheet
SEMICONDUCTOR KTC8050A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8550A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.0... See More ⇒
SEMICONDUCTOR KTC8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.10 VCBO Collector-Base Voltag... See More ⇒
SEMICONDUCTOR KTC801F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES B Thin fine pitch super mini 6pin. B1 Excellent temperature response between these 2 transistor. DIM MILLIMETERS _ + A 1.0 0.05 High pairing property in hFE. _ + A1 0.7 0.05 1 6 The follwing characteristics are common for Q1, Q2. _ + B 1.0 0.05 _... See More ⇒
Detailed specifications: KTC4373, KTC4374, KTC4375, KTC4376, KTC4377, KTC4378, KTC4379, KTC4419, BC547, KTC8550, KTC9011, KTC9012, KTC9013, KTC9014, KTC9015, KTC9016, KTC9018
Keywords - KTC8050 pdf specs
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History: ET6060 | 3DD13009X8D
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