All Transistors. KTC9012 Datasheet

 

KTC9012 Datasheet, Equivalent, Cross Reference Search


   Type Designator: KTC9012
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 64
   Noise Figure, dB: -
   Package: TO92

 KTC9012 Transistor Equivalent Substitute - Cross-Reference Search

   

KTC9012 Datasheet (PDF)

 ..1. Size:360K  kec
 ktc9012.pdf

KTC9012 KTC9012

SEMICONDUCTOR KTC9012TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity.Complementary to KTC9013.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25)F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBO -40

 0.1. Size:353K  kec
 ktc9012s.pdf

KTC9012 KTC9012

SEMICONDUCTOR KTC9012STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_Excellent hFE Linearity.+A 2.93 0.20B 1.30+0.20/-0.15Complementary to KTC9013S.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10QMAXIMUM RATING (Ta=25)

 0.2. Size:613K  kec
 ktc9012sc.pdf

KTC9012 KTC9012

SEMICONDUCTOR KTC9012SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESExcellent hFE Linearity.Complementary to KTC9013SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -40 VCollector-Base VoltageVCEO -30 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -5 VICCollector Current -500 mA

 8.1. Size:354K  kec
 ktc9014s.pdf

KTC9012 KTC9012

SEMICONDUCTOR KTC9014STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_+A 2.93 0.20Excellent hFE LinearityB 1.30+0.20/-0.15: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).C 1.30 MAX23 D 0.40+0.15/-0.05Low Noise :NF=1dB(Typ.) at f=1kHz.E 2.40+0.30/-0.201G 1.90Complementary to KTC9

 8.2. Size:400K  kec
 ktc9011s.pdf

KTC9012 KTC9012

SEMICONDUCTOR KTC9011STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. EL B LFEATUREDIM MILLIMETERSHigh Power Gain : Gpe=29dB(Typ.) at f=10.7MHz._A 2.93 0.20+B 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25 )J 0.13+0.10/-0.05K 0.00 ~ 0.10CH

 8.3. Size:34K  kec
 ktc9018.pdf

KTC9012

SEMICONDUCTOR KTC9018TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.VHF BAND AMPLIFIER APPLICATION.B CFEATURESSmall Reverse Transfer Capacitance: Cre=0.65pF(Typ.).N DIM MILLIMETERSLow Noise Figure : NF=2.2dB(Typ.) at f=100MHz.A 4.70 MAXEKB 4.80 MAXHigh Transition Frequency : fT=800MHz(Typ.). GC 3.70 MAXDD 0.45

 8.4. Size:354K  kec
 ktc9015s.pdf

KTC9012 KTC9012

SEMICONDUCTOR KTC9015STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERSExcellent hFE Linearity_+A 2.93 0.20B 1.30+0.20/-0.15: hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.).C 1.30 MAX23 D 0.40+0.15/-0.05Low Noise :NF=1dB(Typ.) at f=1kHz.E 2.40+0.30/-0.20Complementary to KTC9014S. 1

 8.5. Size:109K  kec
 ktc9015.pdf

KTC9012

 8.6. Size:643K  kec
 ktc9015sc.pdf

KTC9012 KTC9012

SEMICONDUCTOR KTC9015SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.FEATURESExcellent hFE Linearity: hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.).Complementary to KTC9014SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -70 VCollector-Base VoltageVCEO -50 VCollector-Emitter VoltageVEBOEmitter-Base Vo

 8.7. Size:27K  kec
 ktc9016.pdf

KTC9012

SEMICONDUCTOR KTC9016TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.HF, VHF BAND AMPLIFIER APPLICATION.B CFEATURESSmall Reverse Transfer Capacitance: Cre=0.65pF(Typ.).N DIM MILLIMETERSLow Noise Figure :NF=2.2dB(Typ.) at f=100MHz.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25

 8.8. Size:651K  kec
 ktc9014sc.pdf

KTC9012 KTC9012

SEMICONDUCTOR KTC9014SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.FEATURESExcellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).Complementary to KTC9015SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 80 VVCEOCollector-Emitter Voltage 50 VVEBOEmitter-Base Voltag

 8.9. Size:343K  kec
 ktc9014a.pdf

KTC9012

SEMICONDUCTOR KTC9014ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSLow Noise :NF=1dB(Typ.) at f=1kHz.A 4.70 MAXEKB 4.80 MAXComplementary to KTC9015A. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_MAXIMUM RA

 8.10. Size:59K  kec
 ktc9013.pdf

KTC9012 KTC9012

SEMICONDUCTOR KTC9013TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Excellent hFE Linearity. Complementary to KTC9012.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBOCollect

 8.11. Size:402K  kec
 ktc9016s.pdf

KTC9012 KTC9012

SEMICONDUCTOR KTC9016STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.HF, VHF BAND AMPLIFIER APPLICATION.EL B LFEATURESDIM MILLIMETERSSmall Reverse Transfer Capacitance_A 2.93 0.20+B 1.30+0.20/-0.15: Cre=0.65pF(Typ.).C 1.30 MAX2Low Noise Figure :NF=2.2dB(Typ.) at f=100MHz. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1

 8.12. Size:113K  kec
 ktc9014.pdf

KTC9012

 8.13. Size:402K  kec
 ktc9018s.pdf

KTC9012 KTC9012

SEMICONDUCTOR KTC9018STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.VHF BAND AMPLIFIER APPLICATION.EL B LFEATURESDIM MILLIMETERSSmall Reverse Transfer Capacitance_A 2.93 0.20+B 1.30+0.20/-0.15: Cre=0.65pF(Typ.).C 1.30 MAX2Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20High Tran

 8.14. Size:26K  kec
 ktc9011.pdf

KTC9012

SEMICONDUCTOR KTC9011TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B CFEATUREHigh Power Gain : Gpe=29dB(Typ.) at f=10.7MHz.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBOCollector-Base Voltage 35 V H 0

 8.15. Size:344K  kec
 ktc9015a.pdf

KTC9012

SEMICONDUCTOR KTC9015ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity: hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.).N DIM MILLIMETERSLow Noise :NF=1dB(Typ.) at f=1kHz.A 4.70 MAXEKB 4.80 MAXComplementary to KTC9014A. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_MAXIMUM

 8.16. Size:350K  kec
 ktc9013sc.pdf

KTC9012 KTC9012

SEMICONDUCTOR KTC9013SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESExcellent hFE Linearity.Complementary to KTC9012SC.DIM MILLIMETERS_+A 2.90 0.123B 1.30+0.20/-0.15C 1.30 MAX1D 0.40+0.15/-0.05E 2.40+0.30/-0.20G 1.90MAXIMUM RATING (Ta=25)J 0.10K 0.00 ~ 0.10CHARACTERISTIC SYMBO

 8.17. Size:353K  kec
 ktc9013s.pdf

KTC9012 KTC9012

SEMICONDUCTOR KTC9013STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_+Excellent hFE Linearity. A 2.93 0.20B 1.30+0.20/-0.15Complementary to KTC9012S.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10QMAXIMUM RATING (Ta=25)L

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: CSA1267 | BFR80 | 2SB1297 | KRA113M | D29J10 | 2SB864 | 2SA1372

 

 
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