KTC9012 Datasheet and Replacement
Type Designator: KTC9012
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625
W
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 175
°C
Forward Current Transfer Ratio (hFE), MIN: 64
Noise Figure, dB: -
Package:
TO92
-
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KTC9012 Datasheet (PDF)
..1. Size:360K kec
ktc9012.pdf 
SEMICONDUCTOR KTC9012TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity.Complementary to KTC9013.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25)F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBO -40
0.1. Size:353K kec
ktc9012s.pdf
SEMICONDUCTOR KTC9012STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_Excellent hFE Linearity.+A 2.93 0.20B 1.30+0.20/-0.15Complementary to KTC9013S.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10QMAXIMUM RATING (Ta=25)
0.2. Size:613K kec
ktc9012sc.pdf
SEMICONDUCTOR KTC9012SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESExcellent hFE Linearity.Complementary to KTC9013SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -40 VCollector-Base VoltageVCEO -30 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -5 VICCollector Current -500 mA
8.2. Size:354K kec
ktc9014s.pdf
SEMICONDUCTOR KTC9014STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_+A 2.93 0.20Excellent hFE LinearityB 1.30+0.20/-0.15: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).C 1.30 MAX23 D 0.40+0.15/-0.05Low Noise :NF=1dB(Typ.) at f=1kHz.E 2.40+0.30/-0.201G 1.90Complementary to KTC9
8.3. Size:400K kec
ktc9011s.pdf
SEMICONDUCTOR KTC9011STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. EL B LFEATUREDIM MILLIMETERSHigh Power Gain : Gpe=29dB(Typ.) at f=10.7MHz._A 2.93 0.20+B 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25 )J 0.13+0.10/-0.05K 0.00 ~ 0.10CH
8.4. Size:34K kec
ktc9018.pdf
SEMICONDUCTOR KTC9018TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.VHF BAND AMPLIFIER APPLICATION.B CFEATURESSmall Reverse Transfer Capacitance: Cre=0.65pF(Typ.).N DIM MILLIMETERSLow Noise Figure : NF=2.2dB(Typ.) at f=100MHz.A 4.70 MAXEKB 4.80 MAXHigh Transition Frequency : fT=800MHz(Typ.). GC 3.70 MAXDD 0.45
8.5. Size:354K kec
ktc9015s.pdf
SEMICONDUCTOR KTC9015STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERSExcellent hFE Linearity_+A 2.93 0.20B 1.30+0.20/-0.15: hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.).C 1.30 MAX23 D 0.40+0.15/-0.05Low Noise :NF=1dB(Typ.) at f=1kHz.E 2.40+0.30/-0.20Complementary to KTC9014S. 1
8.7. Size:643K kec
ktc9015sc.pdf
SEMICONDUCTOR KTC9015SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.FEATURESExcellent hFE Linearity: hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.).Complementary to KTC9014SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -70 VCollector-Base VoltageVCEO -50 VCollector-Emitter VoltageVEBOEmitter-Base Vo
8.8. Size:27K kec
ktc9016.pdf
SEMICONDUCTOR KTC9016TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.HF, VHF BAND AMPLIFIER APPLICATION.B CFEATURESSmall Reverse Transfer Capacitance: Cre=0.65pF(Typ.).N DIM MILLIMETERSLow Noise Figure :NF=2.2dB(Typ.) at f=100MHz.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25
8.9. Size:651K kec
ktc9014sc.pdf
SEMICONDUCTOR KTC9014SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.FEATURESExcellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).Complementary to KTC9015SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 80 VVCEOCollector-Emitter Voltage 50 VVEBOEmitter-Base Voltag
8.10. Size:343K kec
ktc9014a.pdf
SEMICONDUCTOR KTC9014ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSLow Noise :NF=1dB(Typ.) at f=1kHz.A 4.70 MAXEKB 4.80 MAXComplementary to KTC9015A. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_MAXIMUM RA
8.11. Size:59K kec
ktc9013.pdf
SEMICONDUCTOR KTC9013TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Excellent hFE Linearity. Complementary to KTC9012.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBOCollect
8.12. Size:402K kec
ktc9016s.pdf
SEMICONDUCTOR KTC9016STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.HF, VHF BAND AMPLIFIER APPLICATION.EL B LFEATURESDIM MILLIMETERSSmall Reverse Transfer Capacitance_A 2.93 0.20+B 1.30+0.20/-0.15: Cre=0.65pF(Typ.).C 1.30 MAX2Low Noise Figure :NF=2.2dB(Typ.) at f=100MHz. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1
8.14. Size:402K kec
ktc9018s.pdf
SEMICONDUCTOR KTC9018STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.VHF BAND AMPLIFIER APPLICATION.EL B LFEATURESDIM MILLIMETERSSmall Reverse Transfer Capacitance_A 2.93 0.20+B 1.30+0.20/-0.15: Cre=0.65pF(Typ.).C 1.30 MAX2Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20High Tran
8.15. Size:26K kec
ktc9011.pdf
SEMICONDUCTOR KTC9011TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B CFEATUREHigh Power Gain : Gpe=29dB(Typ.) at f=10.7MHz.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBOCollector-Base Voltage 35 V H 0
8.16. Size:344K kec
ktc9015a.pdf
SEMICONDUCTOR KTC9015ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity: hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.).N DIM MILLIMETERSLow Noise :NF=1dB(Typ.) at f=1kHz.A 4.70 MAXEKB 4.80 MAXComplementary to KTC9014A. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_MAXIMUM
8.17. Size:350K kec
ktc9013sc.pdf
SEMICONDUCTOR KTC9013SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESExcellent hFE Linearity.Complementary to KTC9012SC.DIM MILLIMETERS_+A 2.90 0.123B 1.30+0.20/-0.15C 1.30 MAX1D 0.40+0.15/-0.05E 2.40+0.30/-0.20G 1.90MAXIMUM RATING (Ta=25)J 0.10K 0.00 ~ 0.10CHARACTERISTIC SYMBO
8.18. Size:353K kec
ktc9013s.pdf
SEMICONDUCTOR KTC9013STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_+Excellent hFE Linearity. A 2.93 0.20B 1.30+0.20/-0.15Complementary to KTC9012S.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10QMAXIMUM RATING (Ta=25)L
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