2N422 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N422
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.35 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO5
2N422 Transistor Equivalent Substitute - Cross-Reference Search
2N422 Datasheet (PDF)
2n4220-a 2n4221-a 2n4222-a.pdf
Databook.fxp 1/13/99 2:09 PM Page B-10B-10 01/992N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222AN-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C MixersReverse Gate Source & Reverse Gate Drain Voltage 30 V OscillatorsContinuous Forward Gate Current 10 mA VHF AmplifiersContinuous Device Power Dissipation 300 mWPower Derating
Datasheet: 2N4207 , 2N4208 , 2N4209 , 2N420A , 2N421 , 2N4210 , 2N4211 , 2N421A , 2222A , 2N4225 , 2N4226 , 2N4227 , 2N4228 , 2N422A , 2N4231 , 2N4231A , 2N4232 .