2N422 Specs and Replacement
Type Designator: 2N422
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 0.35 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO5
2N422 Substitution
- BJT ⓘ Cross-Reference Search
2N422 datasheet
2n4220-a 2n4221-a 2n4222-a.pdf 
Databook.fxp 1/13/99 2 09 PM Page B-10 B-10 01/99 2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Mixers Reverse Gate Source & Reverse Gate Drain Voltage 30 V Oscillators Continuous Forward Gate Current 10 mA VHF Amplifiers Continuous Device Power Dissipation 300 mW Power Derating... See More ⇒
Detailed specifications: 2N4207, 2N4208, 2N4209, 2N420A, 2N421, 2N4210, 2N4211, 2N421A, BC547B, 2N4225, 2N4226, 2N4227, 2N4228, 2N422A, 2N4231, 2N4231A, 2N4232
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