All Transistors. 2N4231A Datasheet

 

2N4231A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N4231A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO66

 2N4231A Transistor Equivalent Substitute - Cross-Reference Search

   

2N4231A Datasheet (PDF)

 ..1. Size:196K  bocasemi
2n6312 2n6313 2n6314 2n4231a 2n4232a 2n4233a.pdf

2N4231A
2N4231A

ABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com

 8.1. Size:184K  inchange semiconductor
2n4231.pdf

2N4231A
2N4231A

isc Silicon NPN Power Transistor 2N4231DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 9.1. Size:144K  central
2n4237 2n4238 2n4239.pdf

2N4231A
2N4231A

TM2N4237Central2N4238Semiconductor Corp.2N4239NPN SILICON TRANSISTORDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N4237,2N4238, and 2N4239 are Silicon NPN Transistors,in a hermetically sealed metal case designed forpower amplifier, power driver and switching powersupply applications. JEDEC TO-39 CASEMAXIMUM RATINGS: (TC=25C unless otherwise noted)SYMBOL 2N4237 2N4238 2N

 9.2. Size:9K  semelab
2n4236x.pdf

2N4231A

"2N4236X"2N4236XDimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed p

 9.3. Size:196K  bocasemi
2n4234 2n4235 2n4236.pdf

2N4231A
2N4231A

Boca Semiconductor corp.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.com

 9.4. Size:174K  bocasemi
2n4237 2n4238 2n4239.pdf

2N4231A
2N4231A

Boca Semicondcutor Corp.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.com

 9.5. Size:62K  cdil
2n4234 5 6.pdf

2N4231A
2N4231A

Continental Device India LimitedAn ISO/TS 16949 and ISO 9001 Certified CompanyPNP SILICON PLANAR TRANSISTORS 2N4234, 2N42352N4236 TO-39 Metal Can PackageGeneral Purpose TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N4234 2N4235 2N4236 UNITVCEOCollector Emitter Voltage 40 60 80 VVCBOCollector Base Voltage 40 60 80 VVEBOEmitter Base Voltage 7.0 VIBBase Curr

 9.6. Size:188K  inchange semiconductor
2n4232a.pdf

2N4231A
2N4231A

isc Silicon NPN Power Transistor 2N4232ADESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 9.7. Size:188K  inchange semiconductor
2n4233a.pdf

2N4231A
2N4231A

isc Silicon NPN Power Transistor 2N4233ADESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Datasheet: 2N421A , 2N422 , 2N4225 , 2N4226 , 2N4227 , 2N4228 , 2N422A , 2N4231 , 2SD2012 , 2N4232 , 2N4232A , 2N4233 , 2N4233A , 2N4234 , 2N4235 , 2N4236 , 2N4237 .

 

 
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