LBC558AP Specs and Replacement
Type Designator: LBC558AP
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 125
Package: TO92
LBC558AP Substitution
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LBC558AP datasheet
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Detailed specifications: LBC557A, LBC557AP, LBC557B, LBC557BP, LBC557C, LBC557VI, LBC558, LBC558A, TIP122, LBC558B, LBC558BP, LBC558C, LBC558CP, LBC558Vl, LBC559, LBC559A, LBC559AP
Keywords - LBC558AP pdf specs
LBC558AP cross reference
LBC558AP equivalent finder
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History: HSE901
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