LBC558Vl Specs and Replacement
Type Designator: LBC558Vl
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Package: TO92
LBC558Vl Substitution
- BJT ⓘ Cross-Reference Search
LBC558Vl datasheet
NO PDF data!
Detailed specifications: LBC557VI, LBC558, LBC558A, LBC558AP, LBC558B, LBC558BP, LBC558C, LBC558CP, D882, LBC559, LBC559A, LBC559AP, LBC559B, LBC559BP, LBC559C, LBC559CP, LBC560
Keywords - LBC558Vl pdf specs
LBC558Vl cross reference
LBC558Vl equivalent finder
LBC558Vl pdf lookup
LBC558Vl substitution
LBC558Vl replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
2sc458 transistor | b649a transistor | 2sa606 | 2n3644 | 2sc2240bl | 2sc1913 | c2314 transistor | c2482 transistor
