LBC559AP Specs and Replacement
Type Designator: LBC559AP
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 125
Package: TO92
LBC559AP Substitution
- BJT ⓘ Cross-Reference Search
LBC559AP datasheet
NO PDF data!
Detailed specifications: LBC558AP, LBC558B, LBC558BP, LBC558C, LBC558CP, LBC558Vl, LBC559, LBC559A, 13009, LBC559B, LBC559BP, LBC559C, LBC559CP, LBC560, LBC560A, LBC560AP, LBC560B
Keywords - LBC559AP pdf specs
LBC559AP cross reference
LBC559AP equivalent finder
LBC559AP pdf lookup
LBC559AP substitution
LBC559AP replacement
