LP1001 Specs and Replacement
Type Designator: LP1001
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO92
LP1001 Substitution
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LP1001 datasheet
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Detailed specifications: LID930, LJ152, LLB23, LM1090G, LM1133, LM65B, LME501, LN6538, 8550, LP1001A, LT1016, LT10161H, LT5639, LT5817, LX124, M1, M2
Keywords - LP1001 pdf specs
LP1001 cross reference
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