MA4101 Datasheet and Replacement
Type Designator: MA4101
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO18
MA4101 Substitution
MA4101 Datasheet (PDF)
fdma410nz.pdf

April 2009FDMA410NZSingle N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.5 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 4.5 V, ID = 9.5 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 29 m at VGS = 2.5 V, ID = 8.0 Aoptimize the rDS(ON) @ VGS = 1.5 V on special M
ama410n.pdf

Analog Power AMA410NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)92 @ VGS = 10V4.7 Low thermal impedance 10099 @ VGS = 4.5V4.5 Fast switching speed DFN2X2 Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA
Datasheet: MA287 , MA393 , MA393A , MA393B , MA393C , MA393E , MA393G , MA393R , BC337 , MA4102 , MA4103 , MA4104 , MA4404 , MA4404A , MA6001 , MA6002 , MA6003 .
Keywords - MA4101 transistor datasheet
MA4101 cross reference
MA4101 equivalent finder
MA4101 lookup
MA4101 substitution
MA4101 replacement



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
b817 transistor | 2n3394 | 2sb688 | 2sd551 | ac128 datasheet | 2n5496 | 2sb600 | 2sa1209