MA910 Datasheet and Replacement
Type Designator: MA910
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 100 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO5
MA910 Substitution
MA910 Datasheet (PDF)
fdma910pz.pdf

June 2014FDMA910PZSingle P-Channel PowerTrench MOSFET -20 V, -9.4 A, 20 mFeatures General Description Max rDS(on) = 20 m at VGS = -4.5 V, ID = -9.4 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 24 m at VGS = -2.5 V, ID = -8.6 Aapplications.It features a MOSFET with low on-state resist
Datasheet: MA899 , MA900 , MA9001 , MA9002 , MA9003 , MA901 , MA902 , MA909 , D209L , MBTA42 , MC140 , MC141 , MC142 , MC150 , MC151 , MC152 , MC160 .
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