MA910 Specs and Replacement
Type Designator: MA910
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO5
MA910 Substitution
- BJT ⓘ Cross-Reference Search
MA910 datasheet
June 2014 FDMA910PZ Single P-Channel PowerTrench MOSFET -20 V, -9.4 A, 20 m Features General Description Max rDS(on) = 20 m at VGS = -4.5 V, ID = -9.4 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 24 m at VGS = -2.5 V, ID = -8.6 A applications.It features a MOSFET with low on-state resist... See More ⇒
Detailed specifications: MA899, MA900, MA9001, MA9002, MA9003, MA901, MA902, MA909, 8550, MBTA42, MC140, MC141, MC142, MC150, MC151, MC152, MC160
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