All Transistors. MA910 Datasheet

 

MA910 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MA910
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 90 V
   Maximum Collector-Emitter Voltage |Vce|: 90 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO5

 MA910 Transistor Equivalent Substitute - Cross-Reference Search

   

MA910 Datasheet (PDF)

 0.1. Size:495K  fairchild semi
 fdma910pz.pdf

MA910 MA910

June 2014FDMA910PZSingle P-Channel PowerTrench MOSFET -20 V, -9.4 A, 20 mFeatures General Description Max rDS(on) = 20 m at VGS = -4.5 V, ID = -9.4 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 24 m at VGS = -2.5 V, ID = -8.6 Aapplications.It features a MOSFET with low on-state resist

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top