2N424-1 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N424-1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 6 MHz
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package: TO3
2N424-1 Transistor Equivalent Substitute - Cross-Reference Search
2N424-1 Datasheet (PDF)
2n4248 2n4249 2n4250.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n3583 2n3584 2n3585 2n4240 2n6420 2n6421 2n6422 2n6423.pdf
ABoca Semiconductor Corp.http://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.com
2n4240.pdf
isc Silicon NPN Power Transistor 2N4240DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching regulator applications where highfrequency and high voltage swings and requiredABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
