MC141 Specs and Replacement
Type Designator: MC141
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 3.5 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
MC141 Substitution
- BJT ⓘ Cross-Reference Search
MC141 datasheet
MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of http //onsemi.com industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems PDIP-16 associated... See More ⇒
MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of http //onsemi.com industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems PDIP-16 associated... See More ⇒
Detailed specifications: MA9002, MA9003, MA901, MA902, MA909, MA910, MBTA42, MC140, C3198, MC142, MC150, MC151, MC152, MC160, MC161, MC172, MC328
Keywords - MC141 pdf specs
MC141 cross reference
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