All Transistors. 2N4247 Datasheet

 

2N4247 Datasheet and Replacement


   Type Designator: 2N4247
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 106 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 110 °C
   Transition Frequency (ft): 0.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3
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2N4247 Datasheet (PDF)

 9.1. Size:63K  central
2n4248 2n4249 2n4250.pdf pdf_icon

2N4247

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.2. Size:224K  bocasemi
2n3583 2n3584 2n3585 2n4240 2n6420 2n6421 2n6422 2n6423.pdf pdf_icon

2N4247

ABoca Semiconductor Corp.http://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.com

 9.3. Size:188K  inchange semiconductor
2n4240.pdf pdf_icon

2N4247

isc Silicon NPN Power Transistor 2N4240DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching regulator applications where highfrequency and high voltage swings and requiredABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA117 | 2SA1105 | 2N4246 | 2SA1166A | 2SA1020Y | 2SA1095 | 2N1817

Keywords - 2N4247 transistor datasheet

 2N4247 cross reference
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