2N4247 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N4247
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 106 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 110 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3
2N4247 Transistor Equivalent Substitute - Cross-Reference Search
2N4247 Datasheet (PDF)
2n4248 2n4249 2n4250.pdf
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2n3583 2n3584 2n3585 2n4240 2n6420 2n6421 2n6422 2n6423.pdf
ABoca Semiconductor Corp.http://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.com
2n4240.pdf
isc Silicon NPN Power Transistor 2N4240DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching regulator applications where highfrequency and high voltage swings and requiredABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
