All Transistors. MD6001F Datasheet

 

MD6001F Datasheet and Replacement


   Type Designator: MD6001F
   Material of Transistor: Si
   Polarity: p*n
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 170 MHz
   Collector Capacitance (Cc): 5.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO89
 

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MD6001F Datasheet (PDF)

 8.1. Size:197K  onsemi
 nimd6001n nimd6001an.pdf pdf_icon

MD6001F

NIMD6001N, NIMD6001ANDual N-Channel Driver withDiagnostic Output60 V, 3 A, 110 mWNIMD6001N/AN is a dual 3 Amp low-side switch with anintegrated common disable input and drain diagnostic output. Pullinghttp://onsemi.comthe Disable pin low will override any applied gate voltages and turn offboth FET switches. Should either Drain-Source voltage exceed3.0 AMPERESapproximately 50

 8.2. Size:206K  onsemi
 nimd6001n.pdf pdf_icon

MD6001F

NIMD6001N, NIMD6001ANDual N-Channel Driver withDiagnostic Output60 V, 3 A, 110 mWNIMD6001N/AN is a dual 3 Amp low-side switch with anintegrated common disable input and drain diagnostic output. Pullinghttp://onsemi.comthe Disable pin low will override any applied gate voltages and turn offboth FET switches. Should either Drain-Source voltage exceed3.0 AMPERESapproximately 50

 9.1. Size:1830K  willsemi
 wnmd6003.pdf pdf_icon

MD6001F

WNMD6003 WNMD6003 Dual N-Channel, 60V, 0.30A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM SOT-563 Descriptions The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced D1 G2 S2trench technology and design to provide excellent 6 5 4RDS (ON) with low gate charge. This d

 9.2. Size:59K  crystaloncs
 md6002fhxv md6002hx mhq6002hx mq6002hxv.pdf pdf_icon

MD6001F

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