MD6003F
Datasheet, Equivalent, Cross Reference Search
Type Designator: MD6003F
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.4
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 170
MHz
Collector Capacitance (Cc): 5.6
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
TO89
MD6003F
Transistor Equivalent Substitute - Cross-Reference Search
MD6003F
Datasheet (PDF)
8.1. Size:1830K willsemi
wnmd6003.pdf
WNMD6003 WNMD6003 Dual N-Channel, 60V, 0.30A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM SOT-563 Descriptions The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced D1 G2 S2trench technology and design to provide excellent 6 5 4RDS (ON) with low gate charge. This d
9.1. Size:197K onsemi
nimd6001n nimd6001an.pdf
NIMD6001N, NIMD6001ANDual N-Channel Driver withDiagnostic Output60 V, 3 A, 110 mWNIMD6001N/AN is a dual 3 Amp low-side switch with anintegrated common disable input and drain diagnostic output. Pullinghttp://onsemi.comthe Disable pin low will override any applied gate voltages and turn offboth FET switches. Should either Drain-Source voltage exceed3.0 AMPERESapproximately 50
9.2. Size:206K onsemi
nimd6001n.pdf
NIMD6001N, NIMD6001ANDual N-Channel Driver withDiagnostic Output60 V, 3 A, 110 mWNIMD6001N/AN is a dual 3 Amp low-side switch with anintegrated common disable input and drain diagnostic output. Pullinghttp://onsemi.comthe Disable pin low will override any applied gate voltages and turn offboth FET switches. Should either Drain-Source voltage exceed3.0 AMPERESapproximately 50
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