MG50G1BL2 PDF and Equivalents Search

MG50G1BL2 Specs and Replacement

Type Designator: MG50G1BL2

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 450 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: X99

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MG50G1BL2 datasheet

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Detailed specifications: MG100G1FL1, MG100H1AL2, MG100H2DL1, MG15G1AL3, MG15G6EL1, MG200H1AL1, MG30G1BL2, MG30G2CL3, 2SD313, MG50G2CL3, MG75H2DL1, MGT108A, MGT108B, MGT108D, MGT108G, MGT108V, MH0810

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