MG75H2DL1 Specs and Replacement
Type Designator: MG75H2DL1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 350 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 75 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 670 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: X99
MG75H2DL1 Substitution
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MG75H2DL1 datasheet
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MMG75HB120H6UN 1200V 75A Four-Pack Module March 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APP... See More ⇒
MMG75HB060H6EN 600V 75A Four-Pack Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses ... See More ⇒
MMG75H120X6TC 1200V 75A Six-Pack Module May 2020 Preliminary RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba... See More ⇒
Detailed specifications: MG100H2DL1, MG15G1AL3, MG15G6EL1, MG200H1AL1, MG30G1BL2, MG30G2CL3, MG50G1BL2, MG50G2CL3, 2SC2625, MGT108A, MGT108B, MGT108D, MGT108G, MGT108V, MH0810, MH0811, MH0812
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