MH0811 Specs and Replacement
Type Designator: MH0811
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO220
MH0811 Substitution
- BJT ⓘ Cross-Reference Search
MH0811 datasheet
NO PDF data!
Detailed specifications: MG50G2CL3, MG75H2DL1, MGT108A, MGT108B, MGT108D, MGT108G, MGT108V, MH0810, A1013, MH0812, MH0813, MH0816, MH0818, MH0821, MH0822, MH0823, MH8111
Keywords - MH0811 pdf specs
MH0811 cross reference
MH0811 equivalent finder
MH0811 pdf lookup
MH0811 substitution
MH0811 replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
svt20240nt | tip41c replacement | b772m transistor | mj15003g datasheet | irfp460n datasheet | mj15025g | ksa1381 replacement | m3056m mosfet
