MH0812 PDF and Equivalents Search

MH0812 Specs and Replacement

Type Designator: MH0812

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO220

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MH0812 datasheet

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Detailed specifications: MG75H2DL1, MGT108A, MGT108B, MGT108D, MGT108G, MGT108V, MH0810, MH0811, 2SB817, MH0813, MH0816, MH0818, MH0821, MH0822, MH0823, MH8111, MH8112

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