MJ1000 Datasheet and Replacement

isc Silicon NPN Darlington Power Transistor MJ1000DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 3AFE CLow Collector Saturation Voltage-: V = 2.0V(Max.)@ I = 3ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devic

Order this documentMOTOROLAby MJ10007/DSEMICONDUCTOR TECHNICAL DATAMJ10007*Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE SeriesNPN Silicon Power Darlington10 AMPERENPN SILICONTransistors with Base-EmitterPOWER DARLINGTONTRANSISTORSSpeedup Diode400 VOLTS150 WATTSThe MJ10007 Darlington transistor is designed for highvoltage, highspeed,power

Order this documentMOTOROLAby MJ1000/DSEMICONDUCTOR TECHNICAL DATANPNMJ1000Medium-Power Complementary*MJ1001Silicon Transistors*Motorola Preferred Device. . . for use as output devices in complementary general purpose amplifier applica-10 AMPEREtions.DARLINGTON High DC Current Gain hFE = 6000 (Typ) @ IC = 3.0 AdcPOWER TRANSISTORS Monolithic Constructi

Order this documentMOTOROLAby MJ10009/DSEMICONDUCTOR TECHNICAL DATAMJ10009*Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE Series20 AMPERENPN Silicon Power DarlingtonNPN SILICONTransistor with Base-Emitter POWER DARLINGTONTRANSISTORSSpeedup Diode450 and 500 VOLTS175 WATTSThe MJ10009 Darlington transistor is designed for highvoltage, highspeed,

Order this documentMOTOROLAby MJ10005/DSEMICONDUCTOR TECHNICAL DATA*MJ10005Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE Series20 AMPERENPN Silicon Power DarlingtonNPN SILICONTransistor with Base-EmitterPOWER DARLINGTONTRANSISTORSSpeedup Diode400 VOLTS175 WATTSThe MJ10005 Darlington transistor is designed for highvoltage, highspeed,powe

Order this documentMOTOROLAby MJ10000/DSEMICONDUCTOR TECHNICAL DATAMJ10000Designer's Data Sheet20 AMPERESWITCHMODE SeriesNPN SILICONPOWER DARLINGTONNPN Silicon Power DarlingtonTRANSISTORS350 VOLTSTransistor175 WATTSThe MJ10000 Darlington transistor is designed for highvoltage, highspeed,power switching in inductive circuits where fall time is critical. I

COMSETSEMICONDUCTORSSEMICONDUCTORSMJ900 MJ901 PNPMJ1000 MJ1001 NPNCOMPLEMENTARY POWER DARLINGTONSThe MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bastransistors in monolithic Darlington configuration, and are mountedin JEDEC TO-3 metal case. They are intended for usein power linear and switching applications.PNP types are the MJ900 and MJ901, and their compl

MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ10

isc Silicon NPN Darlington Power Transistor MJ10003DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed , power switching inInductive circuits where fall time is critical. They are partic-ularly sui

isc Silicon NPN Darlington Power Transistor MJ10002DESCRIPTIONLow Collector-Emitter Sustaining VoltageHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed , power switching inInductive circuits where fall time is critical. They are partic-ularly suit