All Transistors. MJ10002 Datasheet

 

MJ10002 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJ10002

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 450 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Collector Capacitance (Cc): 325 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

MJ10002 Transistor Equivalent Substitute - Cross-Reference Search

 

MJ10002 Datasheet (PDF)

1.1. mj10002.pdf Size:79K _inchange_semiconductor

MJ10002
MJ10002

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ10002 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V (Min.) ·High Switching Speed APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mod

4.1. mj1000re.pdf Size:139K _motorola

MJ10002
MJ10002

Order this document MOTOROLA by MJ1000/D SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 Medium-Power Complementary * MJ1001 Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applica- 10 AMPERE tions. DARLINGTON High DC Current Gain hFE = 6000 (Typ) @ IC = 3.0 Adc POWER TRANSISTORS Monolithic Construction with B

4.2. mj10000r.pdf Size:212K _motorola

MJ10002
MJ10002

Order this document MOTOROLA by MJ10000/D SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's? Data Sheet 20 AMPERE SWITCHMODE Series NPN SILICON POWER DARLINGTON NPN Silicon Power Darlington TRANSISTORS 350 VOLTS Transistor 175 WATTS The MJ10000 Darlington transistor is designed for highvoltage, highspeed, power switching in inductive circuits where fall time is critical. It is part

 4.3. mj10009r.pdf Size:235K _motorola

MJ10002
MJ10002

Order this document MOTOROLA by MJ10009/D SEMICONDUCTOR TECHNICAL DATA MJ10009* Designer's? Data Sheet *Motorola Preferred Device SWITCHMODE Series 20 AMPERE NPN Silicon Power Darlington NPN SILICON Transistor with Base-Emitter POWER DARLINGTON TRANSISTORS Speedup Diode 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for highvoltage, highspeed, power sw

4.4. mj10005r.pdf Size:229K _motorola

MJ10002
MJ10002

Order this document MOTOROLA by MJ10005/D SEMICONDUCTOR TECHNICAL DATA * MJ10005 Designer's? Data Sheet *Motorola Preferred Device SWITCHMODE Series 20 AMPERE NPN Silicon Power Darlington NPN SILICON Transistor with Base-Emitter POWER DARLINGTON TRANSISTORS Speedup Diode 400 VOLTS 175 WATTS The MJ10005 Darlington transistor is designed for highvoltage, highspeed, power switchi

 4.5. mj10007r.pdf Size:228K _motorola

MJ10002
MJ10002

Order this document MOTOROLA by MJ10007/D SEMICONDUCTOR TECHNICAL DATA MJ10007* Designer's? Data Sheet *Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Darlington 10 AMPERE NPN SILICON Transistors with Base-Emitter POWER DARLINGTON TRANSISTORS Speedup Diode 400 VOLTS 150 WATTS The MJ10007 Darlington transistor is designed for highvoltage, highspeed, power switchin

4.6. mj900-mj901-mj1000-mj1001-1.pdf Size:207K _comset

MJ10002
MJ10002

COMSET SEMICONDUCTORS SEMICONDUCTORS MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementar

4.7. mj900-mj901-mj1000-mj1001.pdf Size:170K _comset

MJ10002
MJ10002

MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ1000 and

4.8. mj10003.pdf Size:207K _inchange_semiconductor

MJ10002
MJ10002

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ10003 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min.) ·High Switching Speed APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mod

4.9. mj1000.pdf Size:101K _inchange_semiconductor

MJ10002
MJ10002

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1000 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS ·Designed for use as output devices in complementary general purpose am

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 
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