MJ10016 Datasheet and Replacement

Order this documentMOTOROLAby MJ10015/DSEMICONDUCTOR TECHNICAL DATAMJ10015MJ10016SWITCHMODE SeriesNPN Silicon Power Darlington50 AMPERETransistors with Base-EmitterNPN SILICONPOWER DARLINGTONSpeedup DiodeTRANSISTORS400 AND 500 VOLTSThe MJ10015 and MJ10016 Darlington transistors are designed for highvoltage,250 WATTShighspeed, power switching in inductive

Order this documentMOTOROLAby MJ10012/DSEMICONDUCTOR TECHNICAL DATAMJ10012MJH10012NPN Silicon Power DarlingtonTransistor10 AMPEREThe MJ10012 and MJH10012 are highvoltage, highcurrent Darlington transistorsPOWER TRANSISTORSdesigned for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN CollectorEmitter Sustaining Voltage

COMSETSEMICONDUCTORSSEMICONDUCTORSMJ900 MJ901 PNPMJ1000 MJ1001 NPNCOMPLEMENTARY POWER DARLINGTONSThe MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bastransistors in monolithic Darlington configuration, and are mountedin JEDEC TO-3 metal case. They are intended for usein power linear and switching applications.PNP types are the MJ900 and MJ901, and their compl

MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ10

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ10012 DESCRIPTION With TO-3 package High voltage,high current DARLINGTON APPLICATIONS Automotive ignition Switching regulator Motor control applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbolute maximum ratings(Ta=25

isc Silicon NPN Darlington Power Transistor MJ10012TDESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)High Power DissipationDARLINGTON100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATIN

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1001 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 3A Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS Designed for use as output devices in complementary general purpose