All Transistors. MJ10016 Datasheet

 

MJ10016 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJ10016

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 500 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 60 A

Max. Operating Junction Temperature (Tj): 200 °C

Collector Capacitance (Cc): 750 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

MJ10016 Transistor Equivalent Substitute - Cross-Reference Search

 

MJ10016 Datasheet (PDF)

4.1. mj10015r.pdf Size:217K _motorola

MJ10016
MJ10016

Order this document MOTOROLA by MJ10015/D SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington 50 AMPERE Transistors with Base-Emitter NPN SILICON POWER DARLINGTON Speedup Diode TRANSISTORS 400 AND 500 VOLTS The MJ10015 and MJ10016 Darlington transistors are designed for highvoltage, 250 WATTS highspeed, power switching in inductive circuit

4.2. mj10012r.pdf Size:191K _motorola

MJ10016
MJ10016

Order this document MOTOROLA by MJ10012/D SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor 10 AMPERE The MJ10012 and MJH10012 are highvoltage, highcurrent Darlington transistors POWER TRANSISTORS designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN CollectorEmitter Sustaining Voltage SILICON

 4.3. mj900-mj901-mj1000-mj1001-1.pdf Size:207K _comset

MJ10016
MJ10016

COMSET SEMICONDUCTORS SEMICONDUCTORS MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementar

4.4. mj900-mj901-mj1000-mj1001.pdf Size:170K _comset

MJ10016
MJ10016

MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ1000 and

 4.5. mj1001.pdf Size:101K _inchange_semiconductor

MJ10016
MJ10016

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1001 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS ·Designed for use as output devices in complementary general purpose am

4.6. mj10012.pdf Size:116K _inchange_semiconductor

MJ10016
MJ10016

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ10012 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage,high current Ў¤ DARLINGTON APPLICATIONS Ў¤ Automotive ignition Ў¤ Switching regulator Ў¤ Motor control applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Abolute maximum ratings(Ta=2

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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