MJ10047 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ10047
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 100 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 2000 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: TO66
MJ10047 Transistor Equivalent Substitute - Cross-Reference Search
MJ10047 Datasheet (PDF)
mj10007r.pdf
Order this documentMOTOROLAby MJ10007/DSEMICONDUCTOR TECHNICAL DATAMJ10007*Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE SeriesNPN Silicon Power Darlington10 AMPERENPN SILICONTransistors with Base-EmitterPOWER DARLINGTONTRANSISTORSSpeedup Diode400 VOLTS150 WATTSThe MJ10007 Darlington transistor is designed for highvoltage, highspeed,power
mj1000re.pdf
Order this documentMOTOROLAby MJ1000/DSEMICONDUCTOR TECHNICAL DATANPNMJ1000Medium-Power Complementary*MJ1001Silicon Transistors*Motorola Preferred Device. . . for use as output devices in complementary general purpose amplifier applica-10 AMPEREtions.DARLINGTON High DC Current Gain hFE = 6000 (Typ) @ IC = 3.0 AdcPOWER TRANSISTORS Monolithic Constructi
mj10009r.pdf
Order this documentMOTOROLAby MJ10009/DSEMICONDUCTOR TECHNICAL DATAMJ10009*Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE Series20 AMPERENPN Silicon Power DarlingtonNPN SILICONTransistor with Base-Emitter POWER DARLINGTONTRANSISTORSSpeedup Diode450 and 500 VOLTS175 WATTSThe MJ10009 Darlington transistor is designed for highvoltage, highspeed,
mj10015r.pdf
Order this documentMOTOROLAby MJ10015/DSEMICONDUCTOR TECHNICAL DATAMJ10015MJ10016SWITCHMODE SeriesNPN Silicon Power Darlington50 AMPERETransistors with Base-EmitterNPN SILICONPOWER DARLINGTONSpeedup DiodeTRANSISTORS400 AND 500 VOLTSThe MJ10015 and MJ10016 Darlington transistors are designed for highvoltage,250 WATTShighspeed, power switching in inductive
mj10012 mj10012r.pdf
Order this documentMOTOROLAby MJ10012/DSEMICONDUCTOR TECHNICAL DATAMJ10012MJH10012NPN Silicon Power DarlingtonTransistor10 AMPEREThe MJ10012 and MJH10012 are highvoltage, highcurrent Darlington transistorsPOWER TRANSISTORSdesigned for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN CollectorEmitter Sustaining Voltage
mj10022r.pdf
Order this documentMOTOROLAby MJ10022/DSEMICONDUCTOR TECHNICAL DATAMJ10022MJ10023Designer's Data SheetSWITCHMODE Series40 AMPERENPN Silicon Power DarlingtonNPN SILICONPOWER DARLINGTONTransistors with Base-EmitterTRANSISTORS350 AND 400 VOLTSSpeedup Diode250 WATTSThe MJ10022 and MJ10023 Darlington transistors are designed for highvoltage,highspeed, pow
mj10005r.pdf
Order this documentMOTOROLAby MJ10005/DSEMICONDUCTOR TECHNICAL DATA*MJ10005Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE Series20 AMPERENPN Silicon Power DarlingtonNPN SILICONTransistor with Base-EmitterPOWER DARLINGTONTRANSISTORSSpeedup Diode400 VOLTS175 WATTSThe MJ10005 Darlington transistor is designed for highvoltage, highspeed,powe
mj10000r.pdf
Order this documentMOTOROLAby MJ10000/DSEMICONDUCTOR TECHNICAL DATAMJ10000Designer's Data Sheet20 AMPERESWITCHMODE SeriesNPN SILICONPOWER DARLINGTONNPN Silicon Power DarlingtonTRANSISTORS350 VOLTSTransistor175 WATTSThe MJ10000 Darlington transistor is designed for highvoltage, highspeed,power switching in inductive circuits where fall time is critical. I
mj10020r.pdf
Order this documentMOTOROLAby MJ10020/DSEMICONDUCTOR TECHNICAL DATAMJ10020MJ10021Designer's Data SheetSWITCHMODE Series60 AMPERENPN Silicon Power DarlingtonNPN SILICONPOWER DARLINGTONTransistors with Base-EmitterTRANSISTORS200 AND 250 VOLTSSpeedup Diode250 WATTSThe MJ10020 and MJ10021 Darlington transistors are designed for highvoltage,highspeed, pow
mj900-mj901-mj1000-mj1001-1.pdf
COMSETSEMICONDUCTORSSEMICONDUCTORSMJ900 MJ901 PNPMJ1000 MJ1001 NPNCOMPLEMENTARY POWER DARLINGTONSThe MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bastransistors in monolithic Darlington configuration, and are mountedin JEDEC TO-3 metal case. They are intended for usein power linear and switching applications.PNP types are the MJ900 and MJ901, and their compl
mj900-mj901-mj1000-mj1001.pdf
MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ10
mj10003.pdf
isc Silicon NPN Darlington Power Transistor MJ10003DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed , power switching inInductive circuits where fall time is critical. They are partic-ularly sui
mj10002.pdf
isc Silicon NPN Darlington Power Transistor MJ10002DESCRIPTIONLow Collector-Emitter Sustaining VoltageHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed , power switching inInductive circuits where fall time is critical. They are partic-ularly suit
mj10012.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ10012 DESCRIPTION With TO-3 package High voltage,high current DARLINGTON APPLICATIONS Automotive ignition Switching regulator Motor control applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbolute maximum ratings(Ta=25
mj10012t.pdf
isc Silicon NPN Darlington Power Transistor MJ10012TDESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)High Power DissipationDARLINGTON100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATIN
mj1001.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1001 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 3A Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS Designed for use as output devices in complementary general purpose
mj1000.pdf
isc Silicon NPN Darlington Power Transistor MJ1000DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 3AFE CLow Collector Saturation Voltage-: V = 2.0V(Max.)@ I = 3ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devic
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .