MJ10102 Datasheet and Replacement

   Type Designator: MJ10102
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 500 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 100 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 4000 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SPECIAL
      - BJT Cross-Reference Search