All Transistors. MJ10201 Datasheet

 

MJ10201 Datasheet and Replacement


   Type Designator: MJ10201
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 500 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 200 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 4000 pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: SPECIAL
 
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MJ10201 Datasheet (PDF)

 9.1. Size:328K  fairchild semi
 fdmj1023pz.pdf pdf_icon

MJ10201

August 2007FDMJ1023PZtmDual P-Channel PowerTrench MOSFET 20V, 2.9A, 112mFeatures General Description Max rDS(on) = 112m at VGS = 4.5V, ID = 2.9AThis dual P-Channel MOSFET uses Fairchilds advanced low voltage PowerTrench process. This device is designed Max rDS(on) = 160m at VGS = 2.5V, ID = 2.4Aspecifically as a single package solution for

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

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