MJ105 Datasheet and Replacement

   Type Designator: MJ105
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 1400 V
   Maximum Collector-Emitter Voltage |Vce|: 750 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 115 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 2
   Noise Figure, dB: -
   Package: TO3
     - BJT ⓘ Cross-Reference Search