2N4261UB Specs and Replacement
Type Designator: 2N4261UB
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 2000 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: LCC3
2N4261UB Substitution
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2N4261UB datasheet
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN 2N4261UBC * JANTX JANTXV * Avail... See More ⇒
Data Sheet No. 2N4261 Generic Part Number Type 2N4261 2N4261 Geometry 0014 Polarity PNP REF MIL-PRF-19500/511 Qual Level JAN - JANS Features Fast switching small signal silicon transistor. Housed in a TO-72 case. Also available in chip form using the 0014 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/511 which Semicoa meets in all cases. ... See More ⇒
Detailed specifications: 2N4257A, 2N4258, 2N4258A, 2N4259, 2N426, 2N4260, 2N4260UB, 2N4261, 2SC2073, 2N4262, 2N4263, 2N4264, 2N4265, 2N4266, 2N4269, 2N4269S, 2N427
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