All Transistors. MJ12022 Datasheet

 

MJ12022 Datasheet and Replacement


   Type Designator: MJ12022
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO3
      - BJT Cross-Reference Search

   

MJ12022 Datasheet (PDF)

 ..1. Size:206K  inchange semiconductor
mj12022.pdf pdf_icon

MJ12022

isc Silicon NPN Power Transistor MJ12022DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25

 8.1. Size:206K  inchange semiconductor
mj12021.pdf pdf_icon

MJ12022

isc Silicon NPN Power Transistor MJ12021DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25

 8.2. Size:206K  inchange semiconductor
mj12020.pdf pdf_icon

MJ12022

isc Silicon NPN Power Transistor MJ12020DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:208K  inchange semiconductor
mj12004.pdf pdf_icon

MJ12022

isc Silicon NPN Power Transistor MJ12004DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 750V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SD1007HR | DRC9143X | BDY12B | K2121A | KT208I | ED1602D | SFE245

Keywords - MJ12022 transistor datasheet

 MJ12022 cross reference
 MJ12022 equivalent finder
 MJ12022 lookup
 MJ12022 substitution
 MJ12022 replacement

 

 
Back to Top

 


 
.