2N4265 Specs and Replacement
Type Designator: 2N4265
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
2N4265 Substitution
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2N4265 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4264/D General Purpose Transistors NPN Silicon 2N4264 2N4265 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol 2N4264 2N4265 Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 15 12 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collec... See More ⇒
... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4264/D General Purpose Transistor NPN Silicon 2N4264 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 15 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collector Current Cont... See More ⇒
Detailed specifications: 2N426, 2N4260, 2N4260UB, 2N4261, 2N4261UB, 2N4262, 2N4263, 2N4264, S8550, 2N4266, 2N4269, 2N4269S, 2N427, 2N4270, 2N4271, 2N4272, 2N4272A
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