2N4269 Specs and Replacement
Type Designator: 2N4269
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO18
2N4269 Substitution
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2N4269 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4264/D General Purpose Transistor NPN Silicon 2N4264 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 15 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collector Current Cont... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4264/D General Purpose Transistors NPN Silicon 2N4264 2N4265 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol 2N4264 2N4265 Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 15 12 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collec... See More ⇒
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN 2N4261UBC * JANTX JANTXV * Avail... See More ⇒
Detailed specifications: 2N4260UB, 2N4261, 2N4261UB, 2N4262, 2N4263, 2N4264, 2N4265, 2N4266, MJE340, 2N4269S, 2N427, 2N4270, 2N4271, 2N4272, 2N4272A, 2N4273, 2N4274
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