MJ16010A Datasheet. Specs and Replacement
Type Designator: MJ16010A 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Package: TO3
MJ16010A Substitution
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MJ16010A datasheet
Order this document MOTOROLA by MJ16010/D SEMICONDUCTOR TECHNICAL DATA MJ16010 Designer's Data Sheet MJW16010 SWITCHMODE Series MJ16012* NPN Silicon Power Transistors These transistors are designed for high voltage, high speed, power switching in MJW16012* inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors MJ16010 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING (see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute... See More ⇒
isc Silicon NPN Power Transistor MJ16010 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. It is particularly suited for line-operate... See More ⇒
Detailed specifications: MJ150BK100, MJ16002, MJ16002A, MJ16004, MJ16006, MJ16006A, MJ16008, MJ16010, TIP122, MJ16012, MJ16014, MJ16016, MJ16018, MJ16020, MJ16022, MJ16110, MJ1800
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