MJ16012 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ16012
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO3
MJ16012 Transistor Equivalent Substitute - Cross-Reference Search
MJ16012 Datasheet (PDF)
mj16012.pdf
isc Silicon NPN Power Transistor MJ16012DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critical. It is particularlysuited for line-operate
mj16010r.pdf
Order this documentMOTOROLAby MJ16010/DSEMICONDUCTOR TECHNICAL DATAMJ16010Designer's Data SheetMJW16010SWITCHMODE SeriesMJ16012*NPN Silicon Power TransistorsThese transistors are designed for highvoltage, highspeed, power switching inMJW16012*inductive circuits where fall time is critical. They are particularly suited forlineoperated switchmode applications
mj16018r.pdf
Order this documentMOTOROLAby MJ16018/DSEMICONDUCTOR TECHNICAL DATA*MJ16018*MJW16018Designer's Data Sheet*Motorola Preferred DeviceNPN Silicon Power TransistorsPOWER TRANSISTORS1.5 kV SWITCHMODE Series10 AMPERESThese transistors are designed for highvoltage, highspeed, power switching in 800 VOLTSinductive circuits where fall time is critical. They are par
mj16018-1400v.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ16018 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector
mj16010.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors MJ16010 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING (see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute
mj16018.pdf
isc Silicon NPN Power Transistor MJ16018DESCRIPTIONFast turn-off timesOperating temperature range -65~200100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
mj16010.pdf
isc Silicon NPN Power Transistor MJ16010DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critical. It is particularlysuited for line-operate
mj16016.pdf
isc Silicon NPN Power Transistor MJ16016DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSY
mj16014.pdf
isc Silicon NPN Power Transistor MJ16014DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
