MJ2855 Specs and Replacement
Type Designator: MJ2855
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 115 W
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
MJ2855 Substitution
MJ2855 datasheet
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Detailed specifications: MJ2501 , MJ2801 , MJ2802 , MJ2814 , MJ2816 , MJ2832 , MJ2840 , MJ2841 , TIP35C , MJ2865 , MJ2901 , MJ2940 , MJ2941 , MJ2955 , MJ2955A , MJ2955SM , MJ3000 .
History: MMDT8050S | MMS8050-L
Keywords - MJ2855 pdf specs
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MJ2855 equivalent finder
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History: MMDT8050S | MMS8050-L
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