MJ4030 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ4030
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO3
MJ4030 Transistor Equivalent Substitute - Cross-Reference Search
MJ4030 Datasheet (PDF)
mj4030.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor MJ4030 DESCRIPTION With TO-3 package Respectively complement to type MJ4035 DARLINGTON High DC current gain APPLICATIONSFor use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE UNITVCBO
mj4030-mj4031-mj4032-mj4033-mj4034-mj4035.pdf
MEDIUM POWER COMPLEMENTARY SILICON MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS TRANSISTORS For use as output devices in complementary general purpose amplifier applications. High DC current Gain hFE=3500 (Typ) @ IC=10 Adc Monolithic Construction with Built-in Base Emitter Shunt Resistor The MJ4030/31/32 ares the transistors NPN The complementary PNP types are t
mj4032 mj4035.pdf
MJ4032MJ4035COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS 1 GENERAL PURPOSE SWITCHING 2 GENERAL PURPOSE AMPLIFIERS DESCRIPTION TO-3The MJ4035 is silicon epitaxial-base NPN powertransistor in mon
mj4033 4034 4035.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ4033/4034/4035 DESCRIPTION With TO-3 package Respectively complement to type MJ4030/4031/4032 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 si
mj4032.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor MJ4032 DESCRIPTION With TO-3 package Respectively complement to type MJ4035 DARLINGTON High DC current gain APPLICATIONSFor use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE UNITVCBO
mj4031.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor MJ4031 DESCRIPTION With TO-3 package Respectively complement to type MJ4034 DARLINGTON High DC current gain APPLICATIONSFor use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE UNITVCBO
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
