All Transistors. MJ4030 Datasheet

 

MJ4030 Datasheet and Replacement


   Type Designator: MJ4030
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO3
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MJ4030 Datasheet (PDF)

 ..1. Size:199K  inchange semiconductor
mj4030.pdf pdf_icon

MJ4030

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor MJ4030 DESCRIPTION With TO-3 package Respectively complement to type MJ4035 DARLINGTON High DC current gain APPLICATIONSFor use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE UNITVCBO

 0.1. Size:215K  comset
mj4030-mj4031-mj4032-mj4033-mj4034-mj4035.pdf pdf_icon

MJ4030

MEDIUM POWER COMPLEMENTARY SILICON MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS TRANSISTORS For use as output devices in complementary general purpose amplifier applications. High DC current Gain hFE=3500 (Typ) @ IC=10 Adc Monolithic Construction with Built-in Base Emitter Shunt Resistor The MJ4030/31/32 ares the transistors NPN The complementary PNP types are t

 9.1. Size:69K  st
mj4032 mj4035.pdf pdf_icon

MJ4030

MJ4032MJ4035COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS 1 GENERAL PURPOSE SWITCHING 2 GENERAL PURPOSE AMPLIFIERS DESCRIPTION TO-3The MJ4035 is silicon epitaxial-base NPN powertransistor in mon

 9.2. Size:116K  inchange semiconductor
mj4033 4034 4035.pdf pdf_icon

MJ4030

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ4033/4034/4035 DESCRIPTION With TO-3 package Respectively complement to type MJ4030/4031/4032 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 si

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC2752N | MCH3245 | 2SB1164 | FJV1845 | BSY25 | MRF5812 | NTE2403

Keywords - MJ4030 transistor datasheet

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