2N4276 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N4276
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 170 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 60 A
Max. Operating Junction Temperature (Tj): 110 °C
Transition Frequency (ft): 0.12 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3
2N4276 Transistor Equivalent Substitute - Cross-Reference Search
2N4276 Datasheet (PDF)
9.1. Size:170K inchange semiconductor
2n4273.pdf
2n4273.pdf
isc Silicon NPN Power Transistor 2N4273DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching regulator applications where highfrequency and high voltage swings and requiredABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
