MJ424 Specs and Replacement
Type Designator: MJ424
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
MJ424 Substitution
- BJT ⓘ Cross-Reference Search
MJ424 datasheet
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ424 DESCRIPTION High Collector-Emitter Voltage-VCEX= 700V DC Current Gain-hFE=10(min)@ IC=2.5A Low Collector-Emitter Saturation Voltage- VCE(sat)=0.8Vdc(max)@IC=1Adc APPLICATIONS Designed for use in high voltage applications in deflection circuits, swithing regulators, inverters, and ti... See More ⇒
Detailed specifications: MJ420S, MJ421, MJ4210, MJ4211, MJ421S, MJ423, MJ4237, MJ4238, TIP122, MJ4240, MJ4247, MJ4248, MJ425, MJ431, MJ432, MJ4360, MJ4361
Keywords - MJ424 pdf specs
MJ424 cross reference
MJ424 equivalent finder
MJ424 pdf lookup
MJ424 substitution
MJ424 replacement
