MJ4240 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ4240
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 120 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO66
MJ4240 Transistor Equivalent Substitute - Cross-Reference Search
MJ4240 Datasheet (PDF)
9.1. Size:198K inchange semiconductor
mj424.pdf
mj424.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ424 DESCRIPTION High Collector-Emitter Voltage-VCEX= 700V DC Current Gain-hFE=10(min)@ IC=2.5A Low Collector-Emitter Saturation Voltage- VCE(sat)=0.8Vdc(max)@IC=1Adc APPLICATIONSDesigned for use in high voltage applications in deflection circuits, swithing regulators, inverters, and ti
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
