MJ4247 Specs and Replacement
Type Designator: MJ4247
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
MJ4247 Substitution
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MJ4247 datasheet
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ424 DESCRIPTION High Collector-Emitter Voltage-VCEX= 700V DC Current Gain-hFE=10(min)@ IC=2.5A Low Collector-Emitter Saturation Voltage- VCE(sat)=0.8Vdc(max)@IC=1Adc APPLICATIONS Designed for use in high voltage applications in deflection circuits, swithing regulators, inverters, and ti... See More ⇒
Detailed specifications: MJ4210, MJ4211, MJ421S, MJ423, MJ4237, MJ4238, MJ424, MJ4240, 13007, MJ4248, MJ425, MJ431, MJ432, MJ4360, MJ4361, MJ4380, MJ4381
Keywords - MJ4247 pdf specs
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History: MJ432
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