MJ4247 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ4247
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
MJ4247 Transistor Equivalent Substitute - Cross-Reference Search
MJ4247 Datasheet (PDF)
mj424.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ424 DESCRIPTION High Collector-Emitter Voltage-VCEX= 700V DC Current Gain-hFE=10(min)@ IC=2.5A Low Collector-Emitter Saturation Voltage- VCE(sat)=0.8Vdc(max)@IC=1Adc APPLICATIONSDesigned for use in high voltage applications in deflection circuits, swithing regulators, inverters, and ti
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .