MJ6302 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

MJ6302 Specs and Replacement

Type Designator: MJ6302

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 16 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

MJ6302 Substitution

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MJ6302 datasheet

9.1. Size:199K inchange semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ6308 DESCRIPTION 700V Collector-Base Breakdown Capability Excellent Dynamic Saturation Characteristics Fast swithing Low Saturation Voltage Advanced Technology Replacement for the 2N6308 APPLICATIONS Designed in circuits requiring good dynamio saturation characteristics in swithin... See More ⇒

Detailed specifications: MJ490, MJ491, MJ500, MJ501, MJ50AC100, MJ5415, MJ5416, MJ6257, BD135, MJ6308, MJ6502, MJ6503, MJ6700, MJ6701, MJ7000, MJ7160, MJ7161