All Transistors. MJ6302 Datasheet

 

MJ6302 Datasheet and Replacement


   Type Designator: MJ6302
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

 MJ6302 Substitution

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MJ6302 Datasheet (PDF)

 9.1. Size:199K  inchange semiconductor
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MJ6302

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ6308 DESCRIPTION 700V Collector-Base Breakdown Capability Excellent Dynamic Saturation Characteristics Fast swithing Low Saturation Voltage Advanced Technology Replacement for the 2N6308 APPLICATIONSDesigned in circuits requiring good dynamio saturation characteristics in swithin

Datasheet: MJ490 , MJ491 , MJ500 , MJ501 , MJ50AC100 , MJ5415 , MJ5416 , MJ6257 , BD135 , MJ6308 , MJ6502 , MJ6503 , MJ6700 , MJ6701 , MJ7000 , MJ7160 , MJ7161 .

History: CSC2001MAI | BDY60A | RT3C77M | BC510B | MMCM2484 | KT312V | BU107

Keywords - MJ6302 transistor datasheet

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