MJ802 Specs and Replacement
Type Designator: MJ802
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
MJ802 Substitution
- BJT ⓘ Cross-Reference Search
MJ802 datasheet
MJ802 SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJ802 is a silicon Epitaxial-Base power transistor mounted in Jedec TO-3 metal case. It is intended for general purpose power amplifier and switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-emitter Voltage (I... See More ⇒
MJ802 High-Power NPN Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. Features http //onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A 30 AMPERE Excellent Safe Operating Area POWER TRANSISTOR Complement to the PNP MJ4502 NPN SILICON Pb-Free Package is Available* 100 V... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ802 DESCRIPTION High DC Current Gain- hFE= 25-100@IC= 7.5A Excellent Safe Operating Area Complement to Type MJ4502 APPLICATIONS Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PA... See More ⇒
Detailed specifications: MJ6701, MJ7000, MJ7160, MJ7161, MJ7200, MJ7201, MJ7260, MJ7261, 2SC945, MJ8100, MJ8101, MJ8400, MJ8500, MJ8501, MJ8502, MJ8503, MJ8504
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