All Transistors. MJ802 Datasheet

 

MJ802 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJ802
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 90 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3

 MJ802 Transistor Equivalent Substitute - Cross-Reference Search

   

MJ802 Datasheet (PDF)

 ..1. Size:41K  st
mj802.pdf

MJ802
MJ802

MJ802SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPEDESCRIPTION The MJ802 is a silicon Epitaxial-Base powertransistor mounted in Jedec TO-3 metal case. Itis intended for general purpose power amplifierand switching applications.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCEO Collector-emitter Voltage (I

 ..2. Size:70K  onsemi
mj802.pdf

MJ802
MJ802

MJ802High-Power NPN SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the PNP MJ4502NPN SILICON Pb-Free Package is Available*100 V

 ..3. Size:111K  mospec
mj802.pdf

MJ802
MJ802

AAA

 ..4. Size:145K  inchange semiconductor
mj802.pdf

MJ802
MJ802

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ802 DESCRIPTION High DC Current Gain- : hFE= 25-100@IC= 7.5A Excellent Safe Operating Area Complement to Type MJ4502 APPLICATIONSDesigned for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PA

 0.1. Size:136K  motorola
mj802rev.pdf

MJ802
MJ802

Order this documentMOTOROLAby MJ802/DSEMICONDUCTOR TECHNICAL DATAMJ802High-Power NPN Silicon30 AMPERETransistorPOWER TRANSISTORNPN SILICON. . . for use as an output device in complementary audio amplifiers to 100Watts100 VOLTSmusic power per channel.200 WATTS High DC Current Gain hFE = 25100 @ IC = 7.5 A Excellent Safe Operating Area Complement

 0.2. Size:70K  onsemi
mj802g.pdf

MJ802
MJ802

MJ802High-Power NPN SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the PNP MJ4502NPN SILICON Pb-Free Package is Available*100 V

 0.3. Size:70K  onsemi
mj802-d.pdf

MJ802
MJ802

MJ802High-Power NPN SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the PNP MJ4502NPN SILICON Pb-Free Package is Available*100 V

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: GS9011G | GF125

 

 
Back to Top