MJ802 Datasheet and Replacement
Type Designator: MJ802
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
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MJ802 Datasheet (PDF)
mj802.pdf

MJ802SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPEDESCRIPTION The MJ802 is a silicon Epitaxial-Base powertransistor mounted in Jedec TO-3 metal case. Itis intended for general purpose power amplifierand switching applications.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCEO Collector-emitter Voltage (I
mj802.pdf

MJ802High-Power NPN SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the PNP MJ4502NPN SILICON Pb-Free Package is Available*100 V
mj802.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ802 DESCRIPTION High DC Current Gain- : hFE= 25-100@IC= 7.5A Excellent Safe Operating Area Complement to Type MJ4502 APPLICATIONSDesigned for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PA
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SC482Y | KSC5025R | HA21X | 2N4955-78 | 2SB67 | D60T6050 | RN4989
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History: 2SC482Y | KSC5025R | HA21X | 2N4955-78 | 2SB67 | D60T6050 | RN4989



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