MJ900 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ900
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO3
MJ900 Transistor Equivalent Substitute - Cross-Reference Search
MJ900 Datasheet (PDF)
mj900.pdf
isc Silicon PNP Darlington Power Transistor MJ900DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -2.0V(Max.)@ I = -3ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output de
mj900-mj901-mj1000-mj1001-1.pdf
COMSETSEMICONDUCTORSSEMICONDUCTORSMJ900 MJ901 PNPMJ1000 MJ1001 NPNCOMPLEMENTARY POWER DARLINGTONSThe MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bastransistors in monolithic Darlington configuration, and are mountedin JEDEC TO-3 metal case. They are intended for usein power linear and switching applications.PNP types are the MJ900 and MJ901, and their compl
mj900-mj901-mj1000-mj1001.pdf
MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ10
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: D60T4075
