All Transistors. MJ901 Datasheet

 

MJ901 Datasheet and Replacement


   Type Designator: MJ901
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO3
 

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MJ901 Datasheet (PDF)

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MJ901

isc Silicon PNP Darlington Power Transistor MJ901DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -2.0V(Max.)@ I = -3ACE (sat) CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for power linear and

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MJ901

COMSETSEMICONDUCTORSSEMICONDUCTORSMJ900 MJ901 PNPMJ1000 MJ1001 NPNCOMPLEMENTARY POWER DARLINGTONSThe MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bastransistors in monolithic Darlington configuration, and are mountedin JEDEC TO-3 metal case. They are intended for usein power linear and switching applications.PNP types are the MJ900 and MJ901, and their compl

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MJ901

MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ10

Datasheet: MJ8500 , MJ8501 , MJ8502 , MJ8503 , MJ8504 , MJ8505 , MJ900 , MJ9000 , NJW0281G , MJ920 , MJ921 , MJD112 , MJD112-1 , MJD112T4 , MJD117 , MJD117-1 , MJD117T4 .

History: 2SC346 | 2SA1802 | 2SC1136

Keywords - MJ901 transistor datasheet

 MJ901 cross reference
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